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IGBT Power Module

Bipolar isolated-gate (IGBT) transistor Three-terminal power semiconductor device used as an Electronic Switch, when developed, to combine high efficiency and fast switching.
It consists of four alternating layers (P-N-P-N) controlled by the Metal-Oxide-Semiconductor Gate Structure (MOS) without Regenerative action. The structure of the IGBT is topologically the same as the THYRISTOR (Thyristor MOS), the Thyristor is pressed and the transistor is allowed in the operating range.
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